HBT low-noise performance in a 0.18 μm SiGe BiCMOS technology

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2000, Pages 9-12

  Greenberg, D R ^a   Ahlgren, D ^a   Freeman, G ^a   Subbanna, S ^a   Radisic, V ^a   Harvey, D S ^a   Webster, C ^a   Larson, L ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH FREQUENCY RECEIVER; MIXED SIGNAL CIRCUIT DESIGN;

CMOS INTEGRATED CIRCUITS; COPPER; CURRENT DENSITY; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033678232     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)

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