Electrical and optical properties of Mg doped MBE grown cubic GaN epilayers

Physica Status Solidi (B) Basic Research

Volumn 210, Issue 2, 1998, Pages 445-449

  As, D J ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040676562     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199812)210:2<445::AID-PSSB445>3.0.CO;2-P     Document Type: Article

References (13)

1. D.J. AS, D. SCHIKORA, A. GREINER, M. LÜBBERS, J. MIMKES, and K. LISCHKA, Phys. Rev. B 54, R11 118 (1996).
2. D. SCHIKORA, M. HANKELN, D.J. AS, K. LISCHKA, T. LITZ, A. WAAG, T. BUHROW, and F. HENNEBERGER, Phys. Rev. B 54, R8381 (1996).
3. D.J. AS, F. SCHMILGUS, C. WANG, B. SCHÖTTKER, D. SCHIKORA, and K. LISCHKA, Appl. Phys. Lett. 70, 1311 (1997).
4. J. HOLST, L. ECKEY, A. HOFFMANN, I. BROSER, B. SCHÖTTKER, D.J. AS, D. SCHIKORA, and K. LISCHKA, Appl. Phys. Lett. 72, 1439 (1998).
5. J. HOLST, L. ECKEY, A. HOFFMANN, I. BROSER, B. SCHÖTTKER, D.J. AS, D. SCHIKORA, and K. LISCHKA, presented at 3rd Europ. Gallium Nitride Workshop (EGW-3), Warschau, 1998.
6. S. GUHA, N.A. BOJARCZUK, and F. CARDONE, Appl. Phys. Lett. 71, 1685 (1997).
7. P.D. KIRCHNER, J.M. WOODALL, J.L. FREEOUF, D.J. WOLFORD, and G.D. PETIT, J. Vac. Sci. Technol. 19, 604 (1981).
8. J. NEUGEBAUER and C.G. VAN DE WALLE, MRS Symp. Proc. 395, 645 (1996).
9. M. LEROUX, B. BEAUMONT, N. GRANDJEAN, J. MASSIES, and P. GIBART, MRS Symp. Proc. 449, 695 (1997).
10. L. ECKEY, U. VON GFUG, J. HOLST, A. HOFFMANN, B. SCHINELLER, K. HEIME, M. HEUKEN, O. SCHÖN, and R. BECCARD, J. Crystal Growth 189/190, 523 (1998).
11. W. KIM, A. SALVADOR, A.E. BOTCHKAREV, O. AKTAS, S.N. MOHAMMAD, and H. MORCOC, Appl. Phys. Lett. 69, 559 (1996).
12. B.K. RIDLEY, in: Quantum Processses in Semiconductors, 2nd ed., Clarendon Press, Oxford 1988 (p. 235).
13. D.C. LOOK, in: Electrical Characterization of GaAs Materials and Devices, Wiley & Sons, Chichester 1989 (p. 93).