Influence of the beam irradiation condition with oblique incidence on crystallization of an Si film by a linearly polarized pulse laser

Materials Research Society Symposium - Proceedings

Volumn 715, Issue , 2002, Pages 199-204

  Nakata, Yasunori ^a   Kaki, Hirokazu ^a   Horita, Susumu ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; GRAIN BOUNDARIES; IRRADIATION; PULSED LASER APPLICATIONS;

FLUENCE; INCIDENT ANGLE; OBLIQUE INCIDENCE; PULSE NUMBER;

SEMICONDUCTING SILICON;

EID: 0036920191     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-715-a22.1     Document Type: Conference Paper

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