Material properties and growth process of microcrystalline silicon with growth rates in excess of 1 nm/s

Materials Research Society Symposium - Proceedings

Volumn 664, Issue , 2001, Pages

  Hamers, E A G ^a   Smets, A H M ^a   Smit, C ^a   Hoefnagels, J P M ^a   Kessels, W M M ^a   Van de Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALLINE MATERIALS; FREE RADICALS; PHOTOCONDUCTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EXPANDING THERMAL PLASMA (ETP);

SILICON;

EID: 0035556371     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-664-a4.2     Document Type: Conference Paper

References (8)