Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition

Journal of Electronic Materials

Volumn 31, Issue 12, 2002, Pages 1341-1346

  Ting, Shyh Fann ^a   Fang, Yean Kuen ^a   Hsieh, Wen Tse ^a   Tsair, Yong Shiuan ^a   Chang, Cheng Nan ^a   Lin, Chun Sheng ^a   Hsieh, Ming Chun ^a   Chiang, Hsin Che ^a   Ho, Jyh Jier ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FORTUNE INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

C Si1 x yCxNy; Carbon source; Methysilane; RTCVD; SiCN

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; EPITAXIAL GROWTH; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON SOURCES;

THIN FILMS;

EID: 0036910056     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0119-2     Document Type: Article

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