Integrated power transistor in 0.18-μm CMOS technology for RF system-on-chip applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 12, 2002, Pages 2873-2881

  Hsu, Heng Ming ^a   Su, Jiong Guang ^b   Chen, Chih Wei ^b   Tang, Denny D ^b   Chen, Chun Hsiung ^a   Sun, Jack Yuan Chen ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

0.18 m CMOS; RF power MOS transistor; System on chip (SoC)

Indexed keywords

ELECTRIC BREAKDOWN; FABRICATION; GAIN MEASUREMENT; MASKS; MICROPROCESSOR CHIPS; MOSFET DEVICES;

POWER TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 0036906305     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.805289     Document Type: Conference Paper

References (18)

1. T for single chip system solutions," in IEEE MTT-S Int. Microwave Symp. Dig., 2001, pp. 1869-1872.
2. Y.J.E. Chen, M. Hamai, D. Heo, A. Sutono, S. Yoo, and J. Laskar, "RF power amplifier integration in CMOS technology," in IEEE MTT-S Int. Microwave Symp. Dig., 2000, pp. 545-548.
3. N. Matsuuno, H. Yano, Y. Suzuki, T. Watanabe, S. Tsubaki, T. Toda, and K. Honjo, "A 500 mW high efficiency Si MOS MMIC amplifier for 900 MHz band use," IEEE Trans. Microwave Theory Tech., vol. 48, pp. 1407-1414, Aug. 2000.
4. E. Morifuji, H.S. Momose, T. Ohguro, T. Yoshitomi, H. Kimijima, F. Matsuoka, M. Kinugawa, Y. Katsumata, and H. Iwai, "Future perspective and scaling down roadmap for RF CMOS," in IEEE VLSI Tech. Symp. Dig., 1999, pp. 163-164.
5. S.M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1982.
6. J.N. Burghartz, M. Hargrove, C.S. Webster, R.A. Groves, M. Keene, K.A. Jenjins, R. Logan, and E. Nowak, "RF potential of a 0.18-μm CMOS logic device technology," IEEE Trans. Electron Devices, vol. 47, pp. 864-870, Apr. 2000.
7. J.G. Su, S.C. Wong, C.Y. Chang, K.Y. Chiu, T.Y. Huang, C.T. Ou, C.H. Kao, and C.J. Chao, "New insights on RF CMOS stability related to bias, scaling, and temperature," in Proc. IEEE Hong Kong Electron Devices Meeting, 2000, pp. 40-43.
8. P. Rossel, H. Tranduc, and G. Charitat, "Power MOS devices: Structures and modeling," in Proc. IEEE 20th Int. Conf Microelectron., 1995, pp. 341-352.
9. M.C.A.M. Koolen, J.A.M. Geelen, and M.P.J.G. Versleijen, "An improved de-embedding technique for on-wafer high-frequency characterization," in Proc. IEEE Bipolar/BiCMOS Circuits Technol. Meeting, 1991, pp. 188-192.
10. S.H.M. Jen, C.C. Enz, D.R. Pehlke, M. Schröter, and B.J. Sheu, "Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz," IEEE Trans. Electron Devices, vol. 46, pp. 2217-2227, Nov. 1999.
11. K. Joardar, "A simple approach to modeling cross-talk in integrated circuits," IEEE J. Solid-State Circuits, vol. 29, pp. 1212-1219, Oct. 1994.
12. T.H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits. Cambridge, U.K.: Cambridge Univ. Press, 1998.
13. M. Trivedi, P. Khandelwal, and K. Shenai, "Performance modeling of RF power MOSFET's," IEEE Trans. Electron Devices, vol. 46, pp. 1974-1802, Aug. 1999.
14. T. Ohguro, M. Saito, K. Endo, M. Kakumoto, T. Yoshitomi, M. Ono, H.S. Momoso, and H. Iwai, "A high frequency 0.35 μm gate length power silicon NMOSFET operating with breakdown voltage of 13 V," in Proc. IEEE Int. Power Semiconduct. Devices and ICs Symp., 1995, pp. 114-118.
15. I. Yoshida, M. Katsueda, Y. Maruyama, and I. Kohjiro, "A highly efficient 1.9-GHz Si high-power MOS amplifier," IEEE Trans. Electron Devices, vol. 45, pp. 953-956, Apr. 1998.
16. T. Ohguro, M. Saito, E. Morifuji, K. Murakami, K. Matsuzaki, T. Yoshitomi, T. Morimoto, H. Sasaki, Y. Katsumata, and H. Iwai, "Power Si-MOSFET operating with high efficiency under low supply voltage," IEEE Trans. Electron Devices, vol. 47, pp. 2358-2391, Dec. 2000.
17. B.P. Linder, J.H. Stathis, and D.J. Frank, "Calculating the error in long term oxide reliability estimate," in IEEE IRP-S Int. Rel. Phys. Symp. Dig., 2001, pp. 168-171.
18. C. Hu et al., "Hot-electron induced MOSFET degradation model, monitor and improvement," IEEE Trans. Electron Devices, vol, ED-32, pp. 375-385, Feb. 1985.