Optical and electrical properties of nanostructured metal-silicon-metal photodetectors

IEEE Journal of Quantum Electronics

Volumn 38, Issue 12, 2002, Pages 1651-1660

  Sharma, A K ^a,b   Zaidi, S H ^c   Logofatu P C ^b,d   Brueck, S R J ^e  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c Gratings Incorporated   (United States)

^d NATIONAL INSTITUTE FOR LASER   (Romania)

^e MSC01 1070   (United States)

Author keywords

Interferometric lithography; Metal semiconductor metal (MSM); Nanostructures; Photodetectors; Rigourous coupled wave analysis (RCWA); Silicon

Indexed keywords

DIFFRACTION GRATINGS; INTERFACES (MATERIALS); INTERFEROMETRY; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; PHOTOCURRENTS; PHYSICAL OPTICS; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTOR METAL BOUNDARIES;

RIGOUROUS COUPLED-WAVE ANALYSIS (RCWA);

PHOTODETECTORS;

EID: 0036905834     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.805112     Document Type: Article

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