A 1.8-GHz high-efficiency 34-dBm silicon bipolar power amplifier

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 12, 2002, Pages 2963-2970

  Carrara, Francesco ^a   Scuderi, Antonino ^b   Biondi, Tonio ^a   Palmisano, Giuseppe ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

DC current capability; Mobile communications; RF power amplifier (PA); Silicon bipolar technology

Indexed keywords

BIPOLAR TRANSISTORS; DOPING (ADDITIVES); ELECTRIC POTENTIAL; MOBILE TELECOMMUNICATION SYSTEMS; OPTIMIZATION; SILICON;

SILICON BIPOLAR TECHNOLOGY;

POWER AMPLIFIERS;

EID: 0036904711     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.805189     Document Type: Conference Paper

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