Radiation damage in He implanted silicon at high temperature using multi-energies

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 198, Issue 1-2, 2002, Pages 83-89

  David, M L ^a   Ratchenkova, A ^b   Oliviero, E ^a   Denanot, M F ^a   Beaufort, M F ^a   Declemy A ^a   Blanchard, C ^a   Gerasimenko, N N ^b   Barbot, Jean Francois ^a  

^a UNIVERSITÉ DE POITIERS   (France)

^b NATIONAL RESEARCH UNIVERSITY OF ELECTRONIC TECHNOLOGY   (Russian Federation)

Author keywords

Defects; Helium; Ion implantation; Silicon; TEM

Indexed keywords

ANNEALING; HELIUM; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; MICROSTRUCTURE; NUCLEATION; POINT DEFECTS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

SECONDARY DEFECTS;

RADIATION DAMAGE;

EID: 0036899123     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01517-3     Document Type: Article

References (15)

1. K.S. Jones, in: R. Hull (Ed.), Properties of Crystalline Silicon, EMIS no. 20, p. 755, 1999.
2. Raineri V., Saggio M., Rimini E. J. Mater. Res. 15:2000;1449.
3. Myers S.M., Follstaedt D.M., Bishop D.M. Mater. Res. Soc. Symp. Proc. 316:1994;33.
4. David M.L., Oliviero E., Ratchenkova A., Gerasimenko N.N., Declémy A., Barbot J.F., van Veen A., Beaufort M.F. Solid State Phenom. 82-84:2002;285.
5. Wong-Leung J., Jagadish C., Conway M.J., FitzGerald J.D. J. Appl. Phys. 89:2001;2556.
6. Stolk P.A., Gossmann H.-J., Eaglesham D.J., Jacobson D.C., Rafferty C.S., Gilmer G.H., Jaraiz M., Poate J.M., Luftman H.S., Haynes T.E. J. Appl. Phys. 81:1997;6031.
7. Tian R. Nucl. Instr. and Meth. B. 160:2000;355.
8. Ziegler J.F., Biersack J.P., Littmark U. The Stopping and Range of Ions in Solids. 1985;Pergamon, New York.
9. Tan T.Y., Goesele U. Appl. Phys. A. 37:1985;1.
10. van Weringen A., Warmoltz N. Physica. 22:1956;849.
11. Hastings J.L., Estreicher S.K. Phys. Rev. B. 56:1997;10215.
12. E. Oliviero, Ph.D, University of Poitiers, 2001.
13. Giles M.D. J. Electrochem. Soc. 138:1991;1160.
14. Claverie A., Colombeau B., Ben Assayag G., Bonafos C., Cristanio F., Omri M., de Mauduit B. Mat. Sci. Semicond. Process. 3:2000;269.
15. Aseev A.L., Fedina L.I., Hoehl D., Bartsch H. Clusters of Interstitial Atoms in Silicon and Germanium. 1994;Akademie Verlag.