Effects of H+, Ar+, and self-ion-irradiation on secondary defects in MeV P+-implanted Si(1 0 0)

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 160, Issue 3, 2000, Pages 355-362

  Tian, Renhe ^a  

^a BEIJING NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CRYSTAL DEFECTS; HYDROGEN; ION BOMBARDMENT; ION IMPLANTATION; PHOSPHORUS; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

SELF ION IRRADIATION;

SILICON WAFERS;

EID: 0033896124     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00613-8     Document Type: Article

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