Ultra-shallow n+p junction formed by PH3 and AsH3 plasma immersion ion implantation

Microelectronics Reliability

Volumn 42, Issue 12, 2002, Pages 1985-1989

  Yang, B L ^a   Cheung, N W ^a   Denholm, S ^b   Shao, J ^b   Wong, H ^c   Lai, P T ^d   Cheng, Y C ^d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Axcelis Thechnologies   (United States)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^d UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC COMPOUNDS; CURRENT DENSITY; DIFFUSION; ELECTRIC RESISTANCE; ION IMPLANTATION; LEAKAGE CURRENTS; PHOSPHORUS COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

PLASMA IMMERSIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0036891289     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00099-9     Document Type: Article

References (11)

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