Electrical characterization of ultra-shallow n+p junctions formed by AsH3 plasma immersion implantation

Microelectronics Reliability

Volumn 40, Issue 2, 2000, Pages 277-281

  Yang, B L ^a   Wong, H ^b   Han, P G ^b   Poon, M C ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; ELECTRIC CURRENT MEASUREMENT; ION IMPLANTATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR PLASMAS; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

GENERATION-RECOMBINATION (GR) PROCESSES; ULTRA-SHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0033887276     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00231-0     Document Type: Article

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