Plasma doping for ultra-shallow junctions

Microelectronics Reliability

Volumn 38, Issue 9, 1998, Pages 1485-1488

  Chan, Chung ^a   Qin, Shu ^a  

^a Northeastern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CONTAMINATION; FABRICATION; MICROELECTRONICS; PLASMA APPLICATIONS; SEMICONDUCTOR DOPING;

MULTIPOLAR MICROWAVE BUCKET PLASMA REACTOR; PLASMA DOPING; ULTRA SHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0032157103     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00036-5     Document Type: Article

References (5)

1. Qin S, Chan C. Plasma immersion ion implantation doping experiments for microelectronics. J Vacuum Sci Technol B 1994;12:962-8.
2. Ziegler JF, Biersack JP, Littmark U. The stopping range of ions in solids. New York: Pergamon Press, 1985.
3. Kakinuma H, Mohri M. Hydrogen-enhanced diffusion of plasma-doped phosphorus in silicon. Jpn J Appl Phys 1995;34:L1325-28.
4. 3 SDS system. In: Materials Modification and Synthesis by Ion Beam Processing. Mat Res Soc Symp Proc, 1997;438:351-6.
5. Burger RM, Donovan RP. Fundamentals of silicon integrated device technologies. Englewood Cliffs, NJ: Prentice-Hall, 1967;1:206.