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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2909-2912

Fluoropolymer-based resists for a single-resist process of 157 nm lithography

(6) Toriumi, M a Yamazaki, T a Furukawa, T a Irie, S a Ishikawa, S a Itani, T a

a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ACIDITY; DISSOLUTION; DRY ETCHING; HYDROPHOBICITY; LITHOGRAPHY; MOLECULAR STRUCTURE; OPACITY; PHOTORESISTS; SWELLING; THICKNESS MEASUREMENT;

FLUOROPOLYMER BASED RESISTS; POSITIVE TONE RESISTS; QUARTZ CRYSTAL MICROBALANCE; TETRAMETHYLAMMONIUM HYDROXIDE;

FLUORINE CONTAINING POLYMERS;

EID: 0036883177 PISSN: 0734211X EISSN: None Source Type: Journal
DOI: 10.1116/1.1526359 Document Type: Article

Times cited : (17)

References (9)

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