New analytical model to determine the drain-source series resistance of FOLD MOSFET

Semiconductor Science and Technology

Volumn 14, Issue 6, 1999, Pages 489-495

  Kumar, A ^a   Kalra, E ^a   Haldar, S ^b   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE; TRANSIT TIME DEVICES;

DRAIN-SOURCE SERIES RESISTANCE;

MOSFET DEVICES;

EID: 0032672648     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/6/301     Document Type: Article

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