Quantitative analysis of annealing-induced structure disordering in ion-implanted amorphous silicon

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 20, Issue 6, 2002, Pages 1855-1859

  Cheng, Ju Yin ^a   Gibson, J M ^b   Baldo, P M ^c   Kestel, B J ^c  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ELECTRON MICROSCOPY; ION IMPLANTATION; NITROGEN;

THERMAL RELAXATION;

AMORPHOUS SILICON;

EID: 0036864338     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1507331     Document Type: Article

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