Novel 0.44 μm2 Ti-salicide STI cell technology for high-density NOR flash memories and high performance embedded application

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 975-978

  Watanabe, H ^a   Yamada, S ^a   Tanimoto, M ^a   Matsui, M ^a   Kitamura, S ^a   Amemiya, K ^a   Tanzawa, T ^a   Sakagami, E ^a   Kurata, M ^a   Isobe, K ^a   Takebuchi, M ^a   Kanda, M ^a   Mori, S ^a   Watanabe, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; GATES (TRANSISTOR); LOGIC CIRCUITS; LOGIC GATES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; TUNGSTEN;

FLASH MEMORY; SHALLOW TRENCH ISOLATION (STI);

NONVOLATILE STORAGE;

EID: 0032272984     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)