X-ray diffraction imaging investigation of silicon carbide on insulator structures

Applied Physics A: Materials Science and Processing

Volumn 75, Issue 5, 2002, Pages 621-627

  Milita, S ^a   Le Tiec, Y ^b   Pernot, E ^c   Di Cioccio, L ^b   Hartwig J ^d   Baruchel, J ^d   Servidori, M ^a   Letertre, F ^e  

^a CNR   (Italy)

^b CEA LETI   (France)

^c Grenoble INP Phelma   (France)

^d EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^e PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; HIGH TEMPERATURE EFFECTS; IMAGING TECHNIQUES; ION IMPLANTATION; OXIDATION; PLASTIC DEFORMATION; SYNCHROTRON RADIATION; X RAY DIFFRACTION ANALYSIS;

SILICON CARBIDE ON INSULATOR STRUCTURES; X RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 0036833269     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390101132     Document Type: Article

References (19)