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Volumn 41, Issue 10, 2002, Pages 6094-6097

Evaluation of lattice strain in silicon substrate beneath aluminum conductor film using high-resolution x-ray microbeam diffractometry

Author keywords

Aluminum conductor; High resolution x ray diffractometry; Lattice strain; Reciprocal space; Rocking curve; Synchrotron radiation; X ray microbeam

Indexed keywords

ALUMINUM; CONDUCTIVE FILMS; DEPOSITION; ELECTRON ENERGY LEVELS; PHOTONS; SILICA; STRAIN MEASUREMENT; SYNCHROTRON RADIATION; X RAY DIFFRACTION ANALYSIS;

EID: 0036818450     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.6094     Document Type: Article
Times cited : (3)

References (16)
  • 1
    • 3042984873 scopus 로고
    • eds. R. R. Haberecht and E. L. Kern (Electrochem. Soc., New York, 1969)
    • Semiconductor Silicon, eds. R. R. Haberecht and E. L. Kern (Electrochem. Soc., New York, 1969).
    • (1969) Semiconductor Silicon


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.