Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs

Nanotechnology

Volumn 13, Issue 5, 2002, Pages 666-668

  Maximov, Ivan ^a   Carlberg, P ^a   Wallin, D ^a   Shorubalko, I ^a   Seifert, W ^a   Xu, H Q ^a   Montelius, L ^a   Samuelson, L ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; OXYGEN; PLASMAS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICA;

BALLISTIC JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0036801415     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/13/5/325     Document Type: Article

References (10)

1. Ramvall P., Carlsson N., Maximov I., Omling P., Samuelson L., Seifert W., Wang Q. and Lourdudoss S. 1997 Appl. Phys. Lett. 71 918.
2. Xu H.Q. 2001 Appl. Phys. Lett. 78 2064.
3. Worschech L., Xu H.Q., Forchel A. and Samuelson L. 2001 Appl. Phys. Lett. 79 3287.
4. Shorubalko I., Xu H.Q., Maximov I., Omling P., Samuelson L. and Seifert W. 2001 Appl. Phys. Lett. 79 1384.
5. Lewen R., Maximov I., Samuelson L., Shorubalko I., Thylen L. and Xu H.Q. 2002 J. Appl. Phys. 91 2398.
6. Shombalko I., Xu H.Q., Maximov I., Nilsson D., Omling P., Samuelson L. and Seifert W. 2002 IEEE Electron Device Lett. 23 377.
7. Maximov I., Wang Q., Graczyk M., Omling P., Samuelson L., Seifert W., Shorubalko I., Hieke K., Lourdudoss S. and Messmer E.R. 1999 Proc. 11th Int. Conf. on InP and Related Materials (Davos, Switzerland, 1999) (Piscataway, NJ: IEEE) p 237.
8. Heidari B., Maximov I., Sarwe E.-L. and Montelius L. 1999 J. Vac. Sci. Technol. B 17 2961.
9. Chou S.Y., Krauss P.R. and Renstrom P.J. 1996 J. Vac. Sci. Technol. B. 14 4129.
10. Maximov I., Sarwe E.-L., Beck M., Deppert K., Graczyk M., Magnusson M.H. and Montelius L. 2002 Microelectron. Eng. 61-6 449.