Fabrication and characterization of 0.2 to 6 μm GaInAs/InP electron waveguides

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 237-240

  Maximov, I ^a   Wang, Q ^a   Graczyk, M ^a   Omling, P ^a   Samuelson, L ^a   Seifert, W ^a   Shorubalko, I ^a   Hieke, K ^a   Lourdadoss, S ^a   Messmer, E R ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ETCHING; FERMI LEVEL; HETEROJUNCTIONS; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTORESISTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

ATMOSPHERIC PRESSURE HYDRIDE VAPOR PHASE EPITAXY (HVPE); DEEP WET ETCHING; ELECTRON WAVEGUIDES;

WAVEGUIDES;

EID: 0032682887     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)