Influence of deposition conditions of La-doped YbBa2Cu3Oy upper layers on electrical properties of interface-modified ramp-edge junction

Physica C: Superconductivity and its Applications

Volumn 378-381, Issue PART 2, 2002, Pages 1353-1356

  Wakana, H ^a   Adachi, S ^a   Horibe, M ^a   Ishimaru, Y ^a   Horibe, O ^a   Tarutani, Y ^a   Tanabe, K ^a  

^a SUPERCONDUCTIVITY RESEARCH LABORATORY   (Japan)

Author keywords

Interface modified ramp edge junction; La doped YBa2Cu3O7 film; La doped YbBa2Cu3O7 film

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); OPTIMIZATION; PULSED LASER DEPOSITION; SUBSTRATES; YTTRIUM BARIUM COPPER OXIDES;

RAMP-EDGE JUNCTIONS;

JOSEPHSON JUNCTION DEVICES;

EID: 0036789124     PISSN: 09214534     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4534(02)01713-6     Document Type: Article

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