The influence of alternative group-V sources on heterointerface quality in the system GaInAs(P) on InP

Thin Solid Films

Volumn 392, Issue 1, 2001, Pages 85-90

  Gerhardt, M ^a   Kirpal, G ^b   Schwabe, R ^a   Benndorf, G ^b   Gottschalch, V ^b  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

Carry over; GaInAs; HRXRD; MOVPE; MQW; TBAs; TBP

Indexed keywords

FILM GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

HETEROINTERFACES;

SEMICONDUCTING FILMS;

EID: 0035939485     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)00964-6     Document Type: Article

References (19)