A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs

IEEE Transactions on Electron Devices

Volumn 49, Issue 10, 2002, Pages 1807-1813

  Liang, Qingqing ^a,b   Cressler, John D ^a,b   Niu, Guofu ^a,b   Malladi, Ramana M ^a,c   Newton, Kim ^c   Harame, David L ^a,c  

^a IEEE   (United States)

^b AUBURN UNIVERSITY   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

2 D simulation; Barrier effect; High current model (HICUM); High injection effect; Kirk effect; SiGe HBTs

Indexed keywords

HETEROJUNCTION BARRIER EFFECTS; HIGH CURRENT MODEL; KIRK EFFECT;

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; FREQUENCIES; MATHEMATICAL MODELS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036773592     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.803631     Document Type: Article

References (11)

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