-
1
-
-
33846693940
-
Piezoresistance effects in germanium and silicon
-
C.S. Smith, "Piezoresistance effects in germanium and silicon," Phys. Rev., vol. 94, pp. 42-45, 1954.
-
(1954)
Phys. Rev.
, vol.94
, pp. 42-45
-
-
Smith, C.S.1
-
2
-
-
77956932240
-
The effects of elastic deformation on the electrical conductivity of semiconductors
-
New York: Academic Press
-
R.W. Keyes, "The effects of elastic deformation on the electrical conductivity of semiconductors," in Solid State Phys., vol. 11. New York: Academic Press, 1960, pp. 149-221.
-
(1960)
Solid State Phys.
, vol.11
, pp. 149-221
-
-
Keyes, R.W.1
-
3
-
-
0000286602
-
Piezoresistive sensors
-
P. Ciureanu and S. Middlehoek, Eds. Bristol, CT: IOP Publishing
-
A. Belu-Marian, E. Candet, and A. Devenyi, "Piezoresistive sensors," in Thin Film Resistive Sensors, P. Ciureanu and S. Middlehoek, Eds. Bristol, CT: IOP Publishing, 1992, pp. 113-213.
-
(1992)
Thin Film Resistive Sensors
, pp. 113-213
-
-
Belu-Marian, A.1
Candet, E.2
Devenyi, A.3
-
4
-
-
0022738197
-
High mobility FET in strained silicon
-
R.W. Keyes, "High mobility FET in strained silicon," IEEE Trans. Electron Devices, vol. ED-33, p. 863, 1986.
-
(1986)
IEEE Trans. Electron Devices
, vol.ED-33
, pp. 863
-
-
Keyes, R.W.1
-
5
-
-
0000826849
-
Thermal stability of undoped strained Si channel SiGe heterostructures
-
H. Klauk et al., "Thermal stability of undoped strained Si channel SiGe heterostructures,"Appl. Phys. Lett., vol. 68, pp. 1975-1977, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 1975-1977
-
-
Klauk, H.1
-
6
-
-
0034794354
-
Strained Si NMOSFETs for high performance CMOS technology
-
K. Rim et al., "Strained Si NMOSFETs for high performance CMOS technology," in 2001 Symp. VLSI Digest, pp. 59-60.
-
(2001)
2001 Symp. VLSI Digest
, pp. 59-60
-
-
Rim, K.1
-
7
-
-
3743109337
-
Stresses and shape changes arising from patterned lines
-
Y.-L. Shen et al., "Stresses and shape changes arising from patterned lines," J. Appl. Phys., vol. 80, pp. 1388-1397, 1996.
-
(1996)
J. Appl. Phys.
, vol.80
, pp. 1388-1397
-
-
Shen, Y.-L.1
-
8
-
-
0032621082
-
Deformation field in single crystal semiconductor substrates caused by metallization
-
I.C. Noyan et al., "Deformation field in single crystal semiconductor substrates caused by metallization," Appl. Phys. Lett., vol. 74, pp. 2352-2355, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 2352-2355
-
-
Noyan, I.C.1
-
9
-
-
0032516155
-
A silicon-based nuclear spin quantum computer
-
B.E. Kane, "A silicon-based nuclear spin quantum computer," Nature, vol. 393, pp. 133-137, 1998.
-
(1998)
Nature
, vol.393
, pp. 133-137
-
-
Kane, B.E.1
-
10
-
-
0034226818
-
Electron spin resonance transistors for quantum computing
-
R. Vrijen, et al., "Electron spin resonance transistors for quantum computing," Phys. Rev. A, vol. 62, p. 012306, 2000.
-
(2000)
Phys. Rev. A
, vol.62
, pp. 012306
-
-
Vrijen, R.1
-
11
-
-
0029388979
-
Quantum computation
-
D.P. DiVincenzo, "Quantum computation," Science, vol. 270, pp. 255-61, 1995.
-
(1995)
Science
, vol.270
, pp. 255-261
-
-
DiVincenzo, D.P.1
-
12
-
-
0040304693
-
Quantum physics and computers
-
A. Barenco, "Quantum physics and computers," Contemporary Phys., vol. 37, pp. 375-89, 1996.
-
(1996)
Contemporary Phys.
, vol.37
, pp. 375-389
-
-
Barenco, A.1
-
13
-
-
0003048224
-
Battling decoherence: The fault-tolerant quantum computer
-
J. Preskill, "Battling decoherence: The fault-tolerant quantum computer," Phys. Today, vol. 53, no. 6, pp. 24-30, 1999.
-
(1999)
Phys. Today
, vol.53
, Issue.6
, pp. 24-30
-
-
Preskill, J.1
-
14
-
-
0037034827
-
Strained silicon for quantum computing
-
R.W. Keyes, "Strained silicon for quantum computing," J. Phys. D., vol. 35, pp. L7-L10, 2002.
-
(2002)
J. Phys. D.
, vol.35
-
-
Keyes, R.W.1
-
15
-
-
77956922672
-
Shallow impurity states in silicon and germanium
-
New York: Academic Press
-
W. Kohn, "Shallow impurity states in silicon and germanium," Solid State Phys., vol. 5. New York: Academic Press, 1957, pp. 258-321.
-
(1957)
Solid State Phys.
, vol.5
, pp. 258-321
-
-
Kohn, W.1
-
16
-
-
0000292527
-
Transport effects in semiconductors
-
P. Price, "Transport effects in semiconductors," Phys Rev., vol. 104, pp. 1223-1239, 1956.
-
(1956)
Phys Rev.
, vol.104
, pp. 1223-1239
-
-
Price, P.1
-
17
-
-
0001739380
-
Hyperfine resonance in silicon donors
-
D.K. Wilson and G. Feher, "Hyperfine resonance in silicon donors," Phys. Rev. vol. 124, pp. 1068-1083, 1961.
-
(1961)
Phys. Rev.
, vol.124
, pp. 1068-1083
-
-
Wilson, D.K.1
Feher, G.2
|