Growth of stoichiometric (002) ZnO thin films on Si (001) substrate by using plasma enhanced chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 20, Issue 5, 2002, Pages 1779-1783

  Li, B S ^a   Liu, Y C ^a   Zhi, Z Z ^b   Shen, D Z ^a   Zhang, J Y ^a   Lu, Y M ^a   Fan, X W ^a   Kong, X G ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE; DEFECTS; FILM GROWTH; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STOICHIOMETRY; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

OPTICAL ABSORPTION (OA) SPECTRA;

THIN FILMS;

EID: 0036748933     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1503783     Document Type: Article

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