Interdiffusion at TiO2/Ti, TiO2/Ti3Al and TiO2/TiAl interfaces studied in bilayer structures

Surface and Interface Analysis

Volumn 34, Issue 1, 2002, Pages 514-518

  Zalar, A ^a   Van Lier, J ^b   Mittemeijer, E J ^b   Kovac J ^a  

^a Institute of Surface Engineering and Optoelectronics Ljubljana   (Slovenia)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

AES depth profiling; Interdiffusion; Interfacial reactions; Oxide metal bilayers; TiO2 metal interfaces

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; AUGER ELECTRON SPECTROSCOPY; CRYSTAL MICROSTRUCTURE; CRYSTALLINE MATERIALS; HEAT TREATMENT; INTERDIFFUSION (SOLIDS); SILICON; SPUTTER DEPOSITION; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BILAYER STRUCTURES; INTERFACE WIDTH; TITANIUM ALUMINIDE;

INTERFACES (MATERIALS);

EID: 0036692821     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1350     Document Type: Conference Paper

References (24)