Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications

Thin Solid Films

Volumn 326, Issue 1-2, 1998, Pages 56-59

  Ko, D H ^a   Lee, N I ^b   Kim, Y W ^b   Lee, M Y ^b  

^a Yonsei University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Gate oxides; Oxide breakdown; Oxide reliabilities; Ti diffusion; Ti polycides; Ti silicide

Indexed keywords

DIFFUSION; GATES (TRANSISTOR); PYROLYSIS; SEMICONDUCTING SILICON COMPOUNDS; TITANIUM COMPOUNDS; ULSI CIRCUITS;

SILICIDES;

MOS DEVICES;

EID: 0032482913     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00757-3     Document Type: Article

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