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Microscopy and Microanalysis

Volumn 8, Issue 4, 2002, Pages 312-318

Nanometric scale investigation of local strain in GaInAs islands by high resolution and analytical TEM

(6) Laval, J Y a Kret, S a Delamarre, C a Bassoul, P a Benabbas, T b Androussi, Y b

a PSL RESEARCH UNIVERSITY (France)

b UNIVERSITÉ LILLE 1 (France)

Author keywords

GaInAs; HREM; Local strain; Quantum dots; X ray nanoanalysis

Indexed keywords

ALLOY; ARSENIC ACID DERIVATIVE; GALLIUM; INDIUM;

CHEMISTRY; CONFERENCE PAPER; CRYSTALLIZATION; ELECTRON MICROSCOPY; ELECTRON PROBE MICROANALYSIS; EVALUATION; IMAGE PROCESSING; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY;

ALLOYS; ARSENATES; CRYSTALLIZATION; ELECTRON PROBE MICROANALYSIS; GALLIUM; IMAGE PROCESSING, COMPUTER-ASSISTED; INDIUM; MICROSCOPY, ELECTRON; NANOTECHNOLOGY;

EID: 0036690916 PISSN: 14319276 EISSN: None Source Type: Journal
DOI: 10.1017/s1431927602020251 Document Type: Conference Paper

Times cited : (4)

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