Improvement of the depth resolution in sputter depth profiling by elastic peak electron spectroscopy

Surface and Interface Analysis

Volumn 33, Issue 8, 2002, Pages 635-639

  Kesler, V ^a   Hofmann, S ^a,b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

Depth profiling; Elastic peak spectroscopy; Ge Si multilayers; MRI model

Indexed keywords

ELASTICITY; ELECTRON SPECTROSCOPY; GERMANIUM; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SILICON; SPUTTER DEPOSITION; THIN FILMS;

ELASTIC PEAK ELECTRON SPECTROSCOPY (EPES); SPUTTER DEPTH PROFILING;

SURFACE CHEMISTRY;

EID: 0036686169     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1432     Document Type: Article

References (26)