Er-doped AlGaAs native oxides: Photoluminescence characterization and process optimization

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 4, 2002, Pages 880-890

  Kou, Leigang ^b,c   Hall, Douglas C ^a,d   Strohhöfer, Christof ^e,f   Polman, Albert ^e   Zhang, Tong ^g,h   Kolbas, Robert M ^a,i   Heller Jr , Richard D ^j   Dupuis, Russell D ^a,j  

^a IEEE   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

^c HEWLETT PACKARD COMPANY   (United States)

^d University of Notre Dame   (United States)

^e FOM INSTITUTE AMOLF   (Netherlands)

^f FRAUNHOFER IZM   (Germany)

^g NORTH CAROLINA STATE UNIVERSITY   (United States)

^h APPLIED MATERIALS INC   (United States)

ⁱ North Carolina State University   (United States)

^j The University of Texas at Austin   (United States)

more..

Author keywords

Aluminum alloys; Erbium; Integrated optoelectronics; Materials processing; Optical amplifiers; Oxidation; Photoluminescence; Semiconductor films

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; WET THERMAL NATIVE OXIDES;

ANNEALING; EPITAXIAL GROWTH; ERBIUM; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTOR DOPING; THERMOOXIDATION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0036662210     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2002.801689     Document Type: Article

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