Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures

Physica Status Solidi (A) Applied Research

Volumn 192, Issue 1, 2002, Pages 21-26

  Monemar, B ^a   Paskov, P P ^a   Pozina, G ^a   Bergman, J P ^a   Kamiyama, S ^b   Iwaya, M ^b   Amano, H ^b   Akasaki, I ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM NITRIDE; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

MULTIPLE QUANTUM WELLS (MQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036650572     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200207)192:1<21::AID-PSSA21>3.0.CO;2-Q     Document Type: Conference Paper

References (11)