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Volumn 68, Issue 6, 1996, Pages 820-822

Excitation power and barrier width dependence of photoluminescence in piezoelectric multiquantum well p-i-n structures

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC FIELDS; ELECTRON TRANSITIONS; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0030569870     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116544     Document Type: Article
Times cited : (20)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.