InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport

Applied Physics Letters

Volumn 77, Issue 11, 2000, Pages 1638-1640

  Pozina, G ^a   Bergman, J P ^a   Monemar, B ^a   Iwaya, M ^b   Nitta, S ^b   Amano, H ^b   Akasaki, I ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000534602     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1310175     Document Type: Article

References (5)

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4. S. Nitta, T. Kashima, M. Kariya, Y, Yukawa, S. Yamaguchi, H. Amano, and I. Akasaki, MRS Internet J. Nitride Semicond. Res. 5S1, W2.8 (2000).
5. V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, Phys. Rev. B 60. 8849 (1999).