Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films

Journal of Applied Physics

Volumn 80, Issue 2, 1996, Pages 962-968

  Tassis, D H ^a   Mitsas, C L ^a   Zorba, T T ^a   Dimitriadis, C A ^a   Valassiades, O ^a   Siapkas, D I ^a   Angelakeris, M ^a   Poulopoulos, P ^a   Flevaris, N K ^a   Kiriakidis, G ^b  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000267420     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362908     Document Type: Article

References (30)

1. M. A. Nicolet and S. S. Lans, in VLSI Electronics-Microstructure Science, edited by N. G. Einspruch and G. B. Larraben (Academic, New York, 1983), Vol. 6.
2. M. C. Bost and J. E. Mahan, J. Appl. Phys. 58, 2969 (1985).
3. M. C. Bost and J. E. Mahan, J. Appl. Phys. 64, 2034 (1988).
4. C. A. Dimitriadis, J. H. Werner, S. Logothetidis, M. Stutzmann, J. Weber, and R. Nesper, J. Appl. Phys. 68, 1726 (1990).
5. O. Valassiades, C. A. Dimitriadis, and J. H. Werner, J. Appl. Phys. 70, 890 (1991).
6. K. Lefki, P. Muret, N, Cherief, and R. C. Cinti, J. Appl. Phys. 69, 352 (1991).
7. J. L. Regolini, F. Tricat, I. Sagnes, Y. Shapira, G. Bremond, and D. Bensahel, IEEE Trans. Electron Devices 39, 200 (1992).
8. D. J. Oostra, C, W. T. Bulle-Liuwma, D. E. W Vandenhoudt, F. Felten, and J. C. Jans, J. Appl. Phys. 74, 4347 (1993).
9. N. E. Christensen, Phys. Rev. B 42, 7148 (1990).
10. K. Radermacher, R. Carius, and S. Mantl, Nucl. Instrum. Methods Phys. Res. B 64, 163 (1994).
11. M. Pauli, M. Ducker, M. Doscher, J. Muller, W. Henrion, and D. Bensahel, Mater. Sci. Eng. B 21, 270 (1993).
12. C. L. Mitsas and D. I. Siapkas, Appl. Opt. 34, 1678 (1995).
13. A. Borgesi, A. Piaggi, A. Stella, G. Guizetti, F. Nara, and G. Santoro, Proceedings of the 20th International Conference on the Physics of Semiconductors, edited by B. M. Anastasakis and J. D. Joannopoulos (World Scientific, Singapore, 1990), pp. 2001-2004.
14. J. Szczyrbowski and A. Czapla, Thin Solid Films 47, 127 (1977).
15. C. L. Mitsas, E. K. Polychroniadis, and D. I. Siapkas, Semicond. Sci. Technol. 8, S356 (1993).
16. J. M. Pawlikowski, Thin Solid Films 127, 29 (1985).
17. G. Guizetti, F. Marabelli, N. Onda, and H. von Kanel, Solid State Commun. 86, 217 (1993).
18. C. Giannini, S. Lagomarsino, F. Scarinci, and P. Castrucci, Phys. Rev. B 45, 8822 (1992).
19. Z. Yang, K. P. Homewood, M. S. Finney, M. A. Harry, and K. J. Reeson, J. Appl. Phys. 78, 1958 (1995).
20. J. Werner, W. Jantsch, and H. J. Queisser, Solid State Commun. 42, 415 (1982).
21. G. Fortunato, D. B. Meakin, P. Migliorato, and P. G. Le Comber, Philos. Mag. B 57, 573 (1988).
22. H. Lange, W. Henrion, B. Selle, E. U. Reinspener, E. Oertland, and H. von Kanel, International Symposium on Si Heterostructures: from Physics to Devices, Creete, Greece, 1995 (unpublished)
23. J. Y. W. Seto, J. Appl. Phys. 40, 5247 (1975).
24. G. Baccarani, B. Ricco, and G. Spadini, J. Appl. Phys. 49, 5565 (1978).
25. B. I. Shklovskii and A. L. Erfos, in Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984), Chap. 4.
26. N. E. Mott and E. A. Davis, Electron Processes in Non-Crystalline Materials (Clarendon, Oxford, 1971).
27. C. Erginsoy, Phys. Rev. 79, 1013 (1950).
28. E. Conwell and V. F. Weisskopf, Phys. Rev. 77, 388 (1950).
29. L. L. Kazmerski, in Polycrystalline and Amorphous Thin Films and Devices, edited by L. L. Kazmerski (Academic, New York, 1980), Chap. 3.
30. G. I. Zebrev, Sov. Phys. Semicond. 24, 570 (1990).