MnSi∼1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique

Journal of Crystal Growth

Volumn 226, Issue 4, 2001, Pages 517-520

  Yang, Junling ^a   Chen, NuoFu ^a,b   Liu, Zhikai ^a   Yang, Shaoyan ^a   Chai, Chunlin ^a   Liao, Meiyong ^a   He, Hongjia ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b Natl Microgravity Lab Chinese A   (China)

Author keywords

A1. X ray diffraction; A3. Ion beam epitaxy; B2. Semiconducting manganese silicide

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; EPITAXIAL GROWTH; ION IMPLANTATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; THICK FILMS; X RAY DIFFRACTION ANALYSIS;

MASS-ANALYZED LOW ENERGY DUAL ION BEAM EPITAXY;

SEMICONDUCTING MANGANESE COMPOUNDS;

EID: 0035427171     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01423-3     Document Type: Article

References (15)