SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Diamond and Related Materials

Volumn 11, Issue 7, 2002, Pages 1344-1348

Fully ion implanted MESFETs in bulk semi-insulating 4H-SiC

(4) Tucker, Jesse B a Papanicolaou, N b Rao, Mulpuri V a Holland, O W c

a Krasnow Institute for Advanced Study (United States)

b NAVAL RESEARCH LABORATORY (United States)

c OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

Annealing; Ion implantation; MESFET; SiC

Indexed keywords

ALUMINUM; ANNEALING; ION IMPLANTATION; NICKEL; OHMIC CONTACTS;

BULK MOBILITIES;

SILICON CARBIDE;

SILICON CARBIDE;

EID: 0036645180 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-9635(01)00746-4 Document Type: Article

Times cited : (11)

References (9)

1
- 0002846412
- (1996) Inst. Phys. Conf. Ser. No. 142 , pp. 1
- Baliga, B.J.¹

2
- 2142680723
- Nov./Dec
- (1997) EPRI J , pp. 31
- Moore, W.¹

3
- 0033363970
- (1999) Microwave Symp. Digest , vol.1 , pp. 321
- Allen, S.T.¹ Pribble, W.L.² Sadler, R.A.³ Alcorn, T.S.⁴ Ring, Z.⁵ Palmour, J.W.⁶

4
- 0030182811
- (1996) IEEE Electron Device Letters , vol.17 , Issue.7 , pp. 369
- Sriram, S.¹ Augustine, G.² Burk, A.A.³ Glass, R.C.⁴ Hobgood, H.M.⁵ Orphanos, P.A.⁶ Rowland, L.B.⁷ Smith, T.J.⁸ Brandt, C.D.⁹ Driver, M.C.¹⁰ Hopkins, R.H.¹¹

5
- 0029488521
- (1995) 53rd Annual Device Research Conference Digest , pp. 102
- Allen, S.T.¹ Palmour, J.W.² Tsvetkov, V.F.³

6
- 0029703646
- (1996) Device Research Conference Digest, 54th Annual , pp. 158
- Lam, M.P.¹ Kornegay, K.T.² Cooper, J.A.³ Melloch, M.R.⁴

7
- 0001258202
- (1999) J. Appl. Phys , vol.86 , pp. 752
- Rao, M.V.¹ Tucker, J.B.² Ridgway, M.C.³ Holland, O.W.⁴ Papanicolaou, N.⁵ Mittereder, J.⁶

8
- 2142785568
- (1996) Inst. Phys. Conf. Ser. No. 142 , pp. 761
- Allen, S.T.¹ Palmour, J.W.² Tsvetkov, V.F.³

9
- 0003666012
- (Silicon and Gallium Arsenide), John-Wiley, New York
- (1994) VLSI Fabrication Principles
- Ghandhi, S.K.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.