Room-temperature ohmic contact on AlGaN/GaN heterostructure with surface treatment using N2 inductively coupled plasma

Electrochemical and Solid-State Letters

Volumn 5, Issue 7, 2002, Pages

  Jeon, Chang Min ^a   Jang, Ho Won ^a   Choi, Kyoung Jin ^a   Bae, Sung Bum ^b   Lee, Jung Hee ^b   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; FERMI LEVEL; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; NITROGEN; OHMIC CONTACTS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM GALLIUM NITRIDE; CONDUCTION BAND; SCHOTTKY BARRIER HEIGHT; SCHOTTKY BEHAVIOR; SPECIFIC CONTACT RESISTIVITY;

HETEROJUNCTIONS;

EID: 0036644172     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1479296     Document Type: Article

References (11)