Ion projection lithography below 70 nm: Tool performance and resist process

Microelectronic Engineering

Volumn 61-62, Issue , 2002, Pages 301-307

  Hirscher, S ^a   Kummel M ^a   Kirch, O ^a   Domke, W D ^a   Wolter, A ^a   Kasmaier R ^a   Buschbeck, H ^b   Cekan, E ^b   Chalupka, A ^b   Chylik, A ^b   Eder, S ^b   Horner, C ^b   Loschner H ^b   Nowak, R ^b   Stengl, G ^b   Windischbauer, T ^b   Zeininger, M ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b IMS NANOFABRICATION AG   (Austria)

Author keywords

Ion projection lithography; Lithography; Resist process

Indexed keywords

ELECTROSTATICS; IMAGING TECHNIQUES; MASKS; PHOTORESISTS; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MANUFACTURE; TITRATION;

ION PROJECTION LITHOGRAPHY (IPL); RESIST PROCESS;

ION BEAM LITHOGRAPHY;

EID: 0036643919     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00529-4     Document Type: Conference Paper

References (6)

1. EIPBN'2001
2. Ion projection lithography: Status of tool and mask developments
3. Comparative study of resolution limiting factors in electron beam lithography using the edge roughness evaluation model
4. MNE'2000
5. EIPBN'2000
6. EIPBN'1999