Resist process development for sub-100-nm ion projection lithography

Microelectronic Engineering

Volumn 57-58, Issue , 2001, Pages 517-524

  Hirscher, S ^a,b   Kaesmaier, R ^b   Domke, W D ^b   Wolter, A ^b   Loschner H ^c   Cekan, E ^c   Horner, C ^c   Zeininger, M ^c   Ochsenhirt, J ^d  

^a UNIVERSITY OF KONSTANZ   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c Ionen Mikrofabrikations Systeme GmbH   (Austria)

^d Institut fur Mikroelektronik Stuttgart   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON BEAMS; ELECTROSTATIC LENSES; MONTE CARLO METHODS; SILICON WAFERS;

ION PROJECTION LITHOGRAPHY (IPL);

ION BEAM LITHOGRAPHY;

EID: 0035450654     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00543-3     Document Type: Article

References (3)