Determination of resist exposure parameters in helium ion beam lithography: Absorbed energy gradient, contrast, and critical dose

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3177-3180

  Ruchhoeft, P ^a   Wolfe, J C ^a  

^a University of Houston   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ERROR ANALYSIS; HELIUM; MONTE CARLO METHODS; POLYMETHYL METHACRYLATES; RATE CONSTANTS;

ENERGY GRADIENTS;

ION BEAM LITHOGRAPHY;

EID: 0034318563     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1319830     Document Type: Article

References (6)

1. T. Brunner, J. Vac. Sci. Technol. B 17, 3362 (1999).
2. R. Kaesmaier, H. Löschner, G. Stengl, J. C. Wolfe, and P. Ruchhoeft, J. Vac. Sci. Technol. B 17, 3091 (1999).
3. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985) [Updated software (version of SRIM 2000) is found at http://www.research.ibm.con/ionbeams].
4. C. A. Mack, in Microlithography Science and Technology, edited by J. Sheats and B. Smith (Dekker, New York, 1998), p. 157.
5. J. C. Wolfe, S. V. Pendharkar, P. Ruchhoeft, S. Sen, M. D. Morgan, W. E. Horne, R. C. Tiberio, and J. N. Randall, J. Vac. Sci. Technol. B 14, 3896 (1996).
6. J. Randall, D. C. Flanders, N. P. Economou, J. P. Donnelly, and E. I. Bromley, J. Vac. Sci. Technol. B 1, 1152 (1983).