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Volumn 18, Issue 6, 2000, Pages 3177-3180

Determination of resist exposure parameters in helium ion beam lithography: Absorbed energy gradient, contrast, and critical dose

Author keywords

[No Author keywords available]

Indexed keywords

ERROR ANALYSIS; HELIUM; MONTE CARLO METHODS; POLYMETHYL METHACRYLATES; RATE CONSTANTS;

EID: 0034318563     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1319830     Document Type: Article
Times cited : (8)

References (6)
  • 4
    • 0342519148 scopus 로고    scopus 로고
    • edited by J. Sheats and B. Smith Dekker, New York
    • C. A. Mack, in Microlithography Science and Technology, edited by J. Sheats and B. Smith (Dekker, New York, 1998), p. 157.
    • (1998) Microlithography Science and Technology , pp. 157
    • Mack, C.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.