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Volumn 18, Issue 6, 2000, Pages 3177-3180
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Determination of resist exposure parameters in helium ion beam lithography: Absorbed energy gradient, contrast, and critical dose
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Author keywords
[No Author keywords available]
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Indexed keywords
ERROR ANALYSIS;
HELIUM;
MONTE CARLO METHODS;
POLYMETHYL METHACRYLATES;
RATE CONSTANTS;
ENERGY GRADIENTS;
ION BEAM LITHOGRAPHY;
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EID: 0034318563
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1319830 Document Type: Article |
Times cited : (8)
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References (6)
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