Heterostructure Si1-xGex channel pMOSFETs with high Ge concentration

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 2, 1998, Pages 864-867

  Pawlowicz, C ^a   Tarr, N G ^a   Berndt, L P ^a   Williams, R L ^b   Landheer, D ^b   Xu, D X ^b   Abid, R ^b   McAlister, S P ^b  

^a CARLETON UNIVERSITY   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032369677     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581024     Document Type: Article

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