Channel effective mass and interfacial effects in Si and SiGe metal-oxide-semiconductor field effect transistor: A charge control model study

Journal of Applied Physics

Volumn 83, Issue 8, 1998, Pages 4264-4271

  Zhang, Yifei ^a   Singh, Jasprit ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRIC VARIABLES CONTROL; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE MODELS;

CHANNEL EFFECTIVE MASS; CHARGE CONTROL;

MOSFET DEVICES;

EID: 0032046724     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367184     Document Type: Article

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