Radiation-hard strip detectors on oxygenated silicon

IEEE Transactions on Nuclear Science

Volumn 49 II, Issue 3, 2002, Pages 1117-1121

  Andricek, L ^a   Lutz, G ^a   Moser, H G ^b   Richter, R H ^a  

^a MPI HALBLEITERLABOR   (Germany)

^b MAX PLANCK INSTITUT FÜR PHYSIK   (Germany)

Author keywords

Oxygen enrichment; Radiation hardness; Silicon strip detector

Indexed keywords

ANNEALING; COLLIDING BEAM ACCELERATORS; CURRENT VOLTAGE CHARACTERISTICS; IRRADIATION; OXYGEN; PROTON BEAMS; RADIATION HARDENING; READOUT SYSTEMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON SENSORS; STRONTIUM;

OXYGENATED SILICON; RADIATION HARDNESS; RADIATION-HARD STRIP DETECTORS; SILICON STRIP DETECTOR;

RADIATION DETECTORS;

EID: 0036624315     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.1039624     Document Type: Article

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