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Volumn 41, Issue 6 A, 2002, Pages 3629-3636
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Optical absorption study of electron-irradiated Czochralski-grown silicon doped with hydrogen
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Author keywords
Complex; Electron irradiation; Frenkel pair; Hydrogen; Optical absorption; Oxygen; Self interstitial; Silicon; Vacancy
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Indexed keywords
ACTIVATION ENERGY;
ANNEALING;
CRYSTAL GROWTH FROM MELT;
ELECTRON IRRADIATION;
HEATING;
LIGHT ABSORPTION;
QUENCHING;
SEMICONDUCTOR DOPING;
SPECTROMETERS;
THERMAL EFFECTS;
THERMODYNAMIC STABILITY;
FOURIER TRANSFORM INFRARED SPECTROMETER;
FRENKEL PAIR;
SELF-INTERSTITIAL;
VACANCY;
SEMICONDUCTING SILICON;
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EID: 0036615210
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.41.3629 Document Type: Article |
Times cited : (8)
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References (20)
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