Hydrogen-point defect complexes in electron-irradiated C-doped and high-purity Si

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 6 A/B, 1999, Pages

  Suezawa, Masashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CARBON; COMPOSITION EFFECTS; ELECTRON IRRADIATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; LIGHT ABSORPTION; POINT DEFECTS; QUENCHING; SEMICONDUCTOR DOPING;

SELF-INTERSTITIAL COMPLEX;

SEMICONDUCTING SILICON;

EID: 0032649776     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l608     Document Type: Article

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