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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 6 B, 2002, Pages 4261-4266

Issues in etching compound and Si-based devices

(3) Wilkinson, Chris D W a,b Deng, Ligang a Rahman, Mahfuzur a

a UNIVERSITY OF GLASGOW (United Kingdom)

b OXFORD INSTRUMENTS PLASMA TECHNOLOGY (United Kingdom)

Author keywords

Compound semiconductors; Damage; Dry etching; Low energy implantation; Low ion energy

Indexed keywords

DRY ETCHING; ION IMPLANTATION; MATHEMATICAL MODELS; POSITIVE IONS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SILICON;

ION-INDUCED DAMAGES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036614783 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.4261 Document Type: Article

Times cited : (13)

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