GaAs-AlGaAs quantum cascade lasers: Physics, technology, and prospects

IEEE Journal of Quantum Electronics

Volumn 38, Issue 6, 2002, Pages 547-558

  Sirtori, Carlo ^a   Page, Hideaki ^a   Becker, Cyrille ^a   Ortiz, Valentin ^a  

^a THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; HETEROJUNCTIONS; ION IMPLANTATION; PELTIER EFFECT; PHONONS; SEMICONDUCTING GALLIUM ARSENIDE;

QUANTUM CASCADE (QC) LASERS;

QUANTUM WELL LASERS;

EID: 0036611202     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.1005405     Document Type: Article

References (44)

1. Quantum cascade laser
2. Short wavelength (λ ∼ 3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs
3. 1-x As quantum cascade lasers
4. GaAs/AlGaAs superlattice quantum cascade lasers at λ ≈ 13 μm
5. A comparison of the performance of GaAs-AlGaAs and InGaAs-AlInAs quantum cascade lasers
6. 300 K operation of a GaAs-based quantum-cascade laser at λ ≈ 9 μm
7. Low-loss Al-free waveguide for unipolar semiconductor lasers
8. Demonstration of (λ ∼ 11.5 μm) GaAs-based quantum cascade laser operating on a Peltier cooled element
9. Far-infrared surface-plasmon quantum cascade lasers at 21.5μm and 24μm wavelengths
10. Room temperature continuous wave operation of a mid-infrared semiconductor laser
11. Continous-wave operation of distributed feedback AlAs/GaAs superlattice quantum cascade lasers
12. High-performance superlattice quantum cascade lasers
13. Room temperature emission of GaAs/AlGaAs superlattice quantum cascade lasers at 12.6μm
14. GaAs/AlGaAs-based microcylinder lasers emitting at 10μm
15. Self-aligned coupled cavity GaAs/AlGaAs midinfrared quantum cascade laser
16. GaAs/AlGaAs distributed feedback quantum cascade lasers
17. Surface-emitting distributed feedback quantum cascade lasers
18. GaAs-based quantum cascade lasers
19. High peak power (1.1W) (Al)GaAs quantum cascade laser emitting at 9.7 μm
20. Carrier thermalization versus phononassisted relaxation in quantum cascade lasers
21. AlAs/GaAs quantum cascade lasers based on large direct conduction band discontinuity
22. Controlling the performance of GaAs-AlGaAs quantum cascade lasers via barrier height modifications
23. Resonant tunneling in quantum cascade lasers
24. Band-structure engineering in strained semiconductor lasers
25. Above-room-temperature optically pumped midinfrared W lasers
26. Quantum cascade unipolar intersubband light emitting diodes in the 8-13 μm wavelength region
27. Resonant Raman line shape of optic phonons in GaAs/AlAs multiple quantum wells
28. Raman scattering due to interface optical phonons in GaAs/AlAs multiple quantum wells
29. Optical-phonon emission in GaAs/AlAs multiple-quantum-well structures determined by hot-electron luminescence
30. Dielectric continuum model and Fröhlich interaction in superlattices
31. Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure system
32. Oscillations up to 420 Ghz in GaAs/AlAs resonant tunnelling diodes
33. Millimeter-band oscillations based on resonant tunneling in double barrier diodes at room temperature
34. Quantum cascade lasers based on a bound-to-continuum transition
35. Evaluation of some scattering times for electrons in unbiased and biased single- and multiple-quantum-well structures
36. Electron-electron scattering in coupled quantum wells
37. Dependence of the device performance on the number of stages in quantum-cascade lasers
38. Vertical transition quantum cascade laser with Bragg confined excited state
39. Improved CW operation of quantum cascade lasers with epitaxial-side heat-sinking
40. Stability of far fields in double heterostructure and multiple quantum well InAsSb/InPAsSb/InAs midinfrared lasers