Comparison of performance of GaAs-AlGaAs and InGaAs-AlInAs quantum cascade lasers

Electronics Letters

Volumn 35, Issue 23, 1999, Pages 2034-2036

  Wilson, L R ^a   Keightley, P T ^a   Cockburn, J W ^a   Skolnick, M S ^a   Clark, J C ^a   Hill, G ^a   Grey, R ^a   Hopkinson, M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TEMPERATURE;

QUANTUM CASCADE LASERS; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0033326551     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991380     Document Type: Article

References (5)

1. 0 operation', Appl. Phys. Lett., 1994, 65, (23), pp. 2901-2903
2. l-xAs quantum cascade lasers', Appl. Phys. Lett., 1998, 73, (24), pp. 3486-3488
3. GIANORDOLI, S., HVOZDARA, L., STRASSER, G., SCHRENK, W., UNTERRAINER, K., and GORNIK, E.: 'GaAs/AlGaAs-based microcylinder lasers emitting at 10μm', Appl. Phys. Lett., 1999, 75, (8), pp. 1045-1047
4. GMACHL, C., TREDICUCCI, A., CAPASSO, F., HUTCHINSON, A.L., SIVCO, D.L., BAILLARGEON, J.N., and CHO, A.Y.: 'High power λ ≃ 8μm quantum cascade lasers with near optimum performance', Appl. Phys. Lett., 1998, 72, (24), pp. 3130-3132
5. FAIST, J., CAPASSO, F., SIRTORI, C., SIVCO, D.L., BAILLARGEON, J.N., HUTCHINSON, A.L., CHU, SUNG-NEE G., and CHO, A.Y.: 'High power mid-infrared (λ ≃ 5μm) quantum cascade lasers operating above room temperature', Appl. Phys. Lett., 1996, 65, (26), pp. 3680-3282