A CMOS compatible power MOSFET for low voltage GHz operation

1999 29th European Microwave Conference, EuMC 1999

Volumn 2, Issue , 1999, Pages 21-24

  Vestling, Lars ^a   Bengtsson, Lars ^b   Olsson, Jörgen ^a  

^a UPPSALA UNIVERSITY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS COMPATIBLE; CMOS PROCESSS; COMPLEX PROCESSING; CURRENT GAINS; LATERAL DOUBLE DIFFUSED MOS; LOW VOLTAGES; LOW-VOLTAGE APPLICATIONS; POWER-ADDED EFFICIENCY;

CMOS INTEGRATED CIRCUITS;

EID: 0002116284     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1999.338399     Document Type: Conference Paper

References (6)

1. I. Yoshida, "2-GHz Si Power MOSFET Technology," IEDM Tech. Dig., pp. 51-54,1997.
2. T. Ohguro, M. Saito, K. Morifuji, K. Murakami, K. Matsuzaki, T. Yoshitomi, T. Morimoto, H. S. Momose, Y. Katsumata, and H. Iwai, "High efficiency 2 GHz power Si-MOSFET design under low supply voltage down to 1 V," IEDM Tech. Dig., pp. 83-86,1996.
3. G. Ma, W. Burger, and C. Dragon, "High Efficiency LDMOS Power FET for Low Voltage Wireless Communications," IEDM Tech. Dig., pp. 91-94, 1996.
4. A. Söderbärg, B. Edholm, J. Olsson, F. Masszi, and K. H. Eklund, "Integration of a Novel High-Voltage Giga-Hertz DMOS Transistor into a Standard CMOS Process," IEDM Tech. Dig., pp. 975-978, 1995.
5. J.-J. Bouny, "Advantages of LDMOS in high power linear amplification," Microwave Engineering Europe, pp. 37-40, April 1996.
6. J. Olsson, R. Valtonen, U. Heinle, L. Vestling, A. Sòderbärg, and H. Norde, "A Capacitance-Voltage Measurement Method for DMOS Transistor Channel Length Extraction," Proc. IEEE ICMTS, pp. 135-140, 1999.